Influence of barrier material and structure on carrier quantum confinement in GaAsBi
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …

The structural and optical properties of GaAs 1− x Bi x quantum wells (QWs) symmetrically
clad by GaAs barriers with and without additional confining AlGaAs layers are studied. It is …

Crystallographic properties of AlAs barriers in GaAsBi-based multi-quantum well structures
grown on GaAs substrates by molecular beam epitaxy (MBE) and migration-enhanced …

GaAs 1− x Bi x/AlGaAs quantum wells (QWs) with varying As/Ga beam equivalent pressure
(BEP) ratios were grown by solid source molecular beam epitaxy at a relatively high …

The effect of rapid thermal annealing on the optical and structural properties of GaAsBi/GaAs
quantum wells (QWs) is investigated. The photoluminescence (PL) spectra of the samples …

We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the
properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High …

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an
asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the …

Quaternary alloy GaAsPBi is a novel III–V compound with attractive optical properties and
can in principle be grown lattice-matched to GaAs. However, the practical realization of the …

A Ga (AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11 nm
embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by …

In this work, we have investigated the structural and optical properties of GaAs (1− x) Bi
x/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311) B …