An optically controlled buildup and erasure of an electric field under the negative electrode
in CdTe: In is reviewed both experimentally and theoretically. Below-band-gap impurity …

The aim of this work is to present the application of photoconductive properties of electro-
optical n-doped CdTe: In single crystals to all-optical processing of signals at λ= 1550 nm …

We demonstrate the possibility of using high resistivity CdZnTe as an active material for all-
optical switching of signals in the third telecommunication window, with sub-nanosecond …

Opto-optical switching of a 1.06-μm signal beam by another 1.06-μm control beam has been
observed in CdTe: In. The switching is caused by the photocharge created by the control …

We demonstrate that a parametrically pumped picosecond laser has enough coherence and
energy to write transient phase gratings at nonresonant interaction, thus allowing a study of …

We have generated electrical pulses of only 480 fs duration by photoconductive switching in
CdTe grown by u1traviolet~ enhanced metalorganic chemical vapor deposition (MOCVD). In …

We report the observation of optical switching in a CdTe etalon at room temperature using
11 ns pulses at 1.064 μm radiation. We have also observed optical limiting and pulse …

We report large enhancement of the two-beam-coupling gain in vanadium-doped cadmium
telluride. We used the applied-alternating-field method with square and sinusoidal …

A semiconductor bulk crystal has several advantages as a nonlinear optical material, such
as low processing cost, long interaction length, and alleviation of the free-carrier absorption …

Low-electron-density Drude (LEDD) materials such as indium tin oxide (ITO) are receiving
considerable attention for their combination of CMOS compatibility, unique epsilon-near …