The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum
dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy …

In segregation effects during InAs growth on GaAs (001) and critical thickness for InAs self-
assembled quantum dots are studied using a real time, in situ technique capable of …

A systematic investigation of the stacking behavior of InAs quantum dots (QDs) with varying
GaAs interlayer thickness d is presented. We compare two-fold stacks of large QDs (≈ 25 …

The 2D–3D growth mode transition during the initial stages of growth of highly strained
InGaAs on GaAs is used to obtain quantum‐sized dot structures. Transmission electron …

InAs quantum dots with size fluctuations of less than 4% were grown on GaAs using the self-
assembling method. By covering the quantum dots with In 0.2 Ga 0.8 As or In 0.2 Al 0.8 As …

The deposition of InAs on GaAs proceeds first by two‐dimensional (2D) growth and above a
1.75‐monolayer coverage by the formation of single‐crystal dots on a residual 2D wetting …

The two‐(2D) to three‐dimensional (3D) growth mode transition during the initial stages of
growth of highly strained In x Ga1− x As on GaAs is used to obtain quantum dot structures …

We present cross-sectional scanning tunneling microscopy (STM) images of strain-induced,
self-organized InAs quantum dots grown on GaAs. Samples containing 5 and 10 …

InAs quantum dots in a GaAs matrix have been prepared by molecular beam epitaxy using a
self-organizing mechanism. A narrow size distribution of single dots of pyramidal shape …

We demonstrate the formation of well-defined InAs quantum dot (QD) arrays by self-
organized engineering of anisotropic strain in a (In, Ga) As/GaAs superlattice (SL). Due to …