A generic and efficient globalized kernel mapping-based small-signal behavioral modeling for GaN HEMT
The work reported in this article explores a novel Particle Swarm Optimization (PSO) tuned
Support Vector Regression (SVR) based technique to develop the small-signal behavioral …
Support Vector Regression (SVR) based technique to develop the small-signal behavioral …
Comprehensive investigation and comparative analysis of machine learning-based small-signal modelling techniques for GaN HEMTs
A number of machine learning (ML) algorithm based small signal modeling of Gallium
Nitride (GaN) High Electron Mobility Transistors (HEMTs) have been reported in literature …
Nitride (GaN) High Electron Mobility Transistors (HEMTs) have been reported in literature …
Accurate, Efficient and Reliable Small-Signal Modelling Approaches for GaN HEMTs
This article presents accurate, efficient and reliable small-signal model parameter extraction
approaches applied to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) …
approaches applied to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) …
Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach
This article reports a comparative study of two artificial neural network structures and
associated variants used to describe and predict the behavior of 2× 200 μm2 GaN high …
associated variants used to describe and predict the behavior of 2× 200 μm2 GaN high …
Enabling the development of accurate intrinsic parameter extraction model for GaN HEMT using support vector regression (SVR)
This study employs support vector regression (SVR) to develop an accurate and reliable
intrinsic parameter extraction model for gallium nitride (GaN) high electron mobility …
intrinsic parameter extraction model for gallium nitride (GaN) high electron mobility …
Exploring support vector regression for modeling of GaN HEMT
This paper, for the first time, presents a support vector regression (SVR) based small signal
modelling approach for a GaN High Electron Mobility Transistor (HEMT). It makes use of the …
modelling approach for a GaN High Electron Mobility Transistor (HEMT). It makes use of the …
Demonstration of CAD deployability for GPR based small-signal modelling of GaN HEMT
This paper develops and presents a CAD deployability of small-signal model of Gallium
Nitride (GaN) High Electron Mobility Transistor (HEMT). First, a Gaussian Process …
Nitride (GaN) High Electron Mobility Transistor (HEMT). First, a Gaussian Process …
A new and reliable decision tree based small-signal behavioral modeling of GaN HEMT
The paper, for the first time, explores multivariable small signal modeling technique of GaN
HEMT based on Decision tree. The proposed model presents a novel binary decision tree to …
HEMT based on Decision tree. The proposed model presents a novel binary decision tree to …
Adaptive particle swarm optimization based hybrid small-signal modeling of GaN HEMT
H Cai, J Zhang, M Liu, S Yang, S Wang, B Liu… - Microelectronics …, 2023 - Elsevier
Based on the GaN HEMT 20-element small-signal model, an improved particle swarm
algorithm is proposed in this paper for the optimization of the intrinsic parameters. The …
algorithm is proposed in this paper for the optimization of the intrinsic parameters. The …
On temperature‐dependent small‐signal modelling of GaN HEMTs using artificial neural networks and support vector regression
Abstract Machine learning‐based efficient temperature‐dependent small‐signal modelling
approaches for GaN high electron mobility transistors (HEMTs) are presented by the authors …
approaches for GaN high electron mobility transistors (HEMTs) are presented by the authors …