S Husain, M Hashmi… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
A number of machine learning (ML) algorithm based small signal modeling of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) have been reported in literature …
This article presents accurate, efficient and reliable small-signal model parameter extraction approaches applied to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) …
This article reports a comparative study of two artificial neural network structures and associated variants used to describe and predict the behavior of 2× 200 μm2 GaN high …
This study employs support vector regression (SVR) to develop an accurate and reliable intrinsic parameter extraction model for gallium nitride (GaN) high electron mobility …
This paper, for the first time, presents a support vector regression (SVR) based small signal modelling approach for a GaN High Electron Mobility Transistor (HEMT). It makes use of the …
This paper develops and presents a CAD deployability of small-signal model of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). First, a Gaussian Process …
The paper, for the first time, explores multivariable small signal modeling technique of GaN HEMT based on Decision tree. The proposed model presents a novel binary decision tree to …
H Cai, J Zhang, M Liu, S Yang, S Wang, B Liu… - Microelectronics …, 2023 - Elsevier
Based on the GaN HEMT 20-element small-signal model, an improved particle swarm algorithm is proposed in this paper for the optimization of the intrinsic parameters. The …
Abstract Machine learning‐based efficient temperature‐dependent small‐signal modelling approaches for GaN high electron mobility transistors (HEMTs) are presented by the authors …