We demonstrate that the weak antilocalization effect can serve as a convenient method for
detecting decoupled surface transport in topological insulator thin films. In the regime where …

We consider in our work single crystal thin films of Bi 2 Se 3, grown by molecular beam
epitaxy, both with and without Pb doping. Angle-resolved photoemission data demonstrate …

Low-field magnetotransport measurements of topological insulators such as Bi 2 Se 3 are
important for revealing the nature of topological surface states by quantum corrections to the …

We study the low-temperature transport properties of Bi2Se3 thin films grown by magnetron
sputtering. A positive magnetoresistance resulting from the weak antilocalization (WAL) …

We show that a number of transport properties in topological insulator (TI) Bi 2 Se 3 exhibit
striking thickness dependences over a range of up to five orders of thickness (3 nm–170 …

While evidence of a topologically nontrivial surface state has been identified in surface-
sensitive measurements of Bi 2 Se 3, a significant experimental concern is that no …

With high quality topological insulator Bi 2 Se 3 thin films, we report thickness-independent
transport properties over wide thickness ranges. Conductance remained nominally constant …

In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating,
should not provide any electric coupling between the two metallic surfaces. However …

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi 2
Se 3 in an electric field effect geometry. By doping the bulk crystals with Ca, we are able to …

The massless Dirac fermions residing on the surface of three-dimensional topological
insulators are protected from backscattering and cannot be localized by disorder, but such …