Engineering of germanium tunnel junctions for optical applications
R Koerner, IA Fischer, D Schwarz… - IEEE Photonics …, 2018 - ieeexplore.ieee.org
Data transfer across millimeter-scale electrical wires is limited by both data rates and power
density, which creates a performance bottleneck for semiconductor microchips in modern …
density, which creates a performance bottleneck for semiconductor microchips in modern …
Tunnel-Modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver
We report on the fabrication of a Ge on Si photonic (SiP) device enabling light emission
under reverse bias and light detection at forward bias, enabled by low-voltage switching Ge …
under reverse bias and light detection at forward bias, enabled by low-voltage switching Ge …
[引用][C] Light up the Future of Microprocessors with Electronic-Photonic Integration
Electronic-photonic synergy has become an increasingly clear solution to high functionality
extension of the Moore's Law on-chip. Power consumption and latency issues in traditional …
extension of the Moore's Law on-chip. Power consumption and latency issues in traditional …
A 40 Gbit/s optical link on a 300-mm silicon platform
We demonstrated 40Gbit/s optical link by coupling a silicon (Si) optical modulator to a
germanium (Ge) photo-detector from two separate photonic chips. The optical modulator …
germanium (Ge) photo-detector from two separate photonic chips. The optical modulator …
Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators
S Park, T Tsuchizawa, T Watanabe, H Shinojima… - Optics express, 2010 - opg.optica.org
We demonstrate the monolithic integration of germanium (Ge) pin photodetector (PDs) with
silicon (Si) variable optical attenuator (VOAs) based on submicrometer Si rib waveguide. A …
silicon (Si) variable optical attenuator (VOAs) based on submicrometer Si rib waveguide. A …
Zener tunnel-injection for Ge optical amplifiers, lasers and modulators
We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect
semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption …
semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption …
25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures
D Benedikovic, L Virot, G Aubin, F Amar… - Photonics …, 2019 - opg.optica.org
Near-infrared germanium (Ge) photodetectors monolithically integrated on top of silicon-on-
insulator substrates are universally regarded as key enablers towards chip-scale …
insulator substrates are universally regarded as key enablers towards chip-scale …
Beyond-the-roadmap technology: Silicon heterojunctions, optoelectronics, and quantum devices
The roadmap for silicon device technology has been drawn, extending to the year 2010, and
featuring a CMOS transistor with a gate length of 0.07 μm [1]. Beyond this point, silicon …
featuring a CMOS transistor with a gate length of 0.07 μm [1]. Beyond this point, silicon …
High efficiency wavelength conversion of 40 Gbps signals at 1550 nm in SOI nano-rib waveguides using pin diodes
A Gajda, F Da Ros, D Vukovic… - … on Group IV …, 2013 - ieeexplore.ieee.org
High efficiency wavelength conversion of 40 Gbps signals at 1550 nm in SOI nano-rib
waveguides using pin diodes Page 1 High Efficiency Wavelength Conversion of 40 Gbps Signals …
waveguides using pin diodes Page 1 High Efficiency Wavelength Conversion of 40 Gbps Signals …
Silicon nitride waveguide-integrated Ge/SiGe quantum wells optical modulator
Silicon-based photonics has generated a strong interest in recent years, mainly for optical
interconnects and sensing on photonic integrated circuits. The main rationales of silicon …
interconnects and sensing on photonic integrated circuits. The main rationales of silicon …