New Design Opportunities exploiting FDSOI technology for RF Power Amplifier and LNA design

F Hameau, J Zaini, T Taris, D Morche… - 2019 17th IEEE …, 2019 - ieeexplore.ieee.org
To demonstrate the capacity of Fully-Depleted Silicon-On-Insulator (FDSOI) technology, this
paper presents two radio frequency designs taking benefit of the key advantages of the …
被引用次数：4 相关文章 所有 2 个版本

Opportunity of CMOS FD-SOI for RF power amplifier

B Martineau, E Mercier, P Vincent - 2017 IEEE SOI-3D …, 2017 - ieeexplore.ieee.org
This paper reports the design of a 5GHz WiFi power amplifier (PA) taking advantage of the
FD-SOI technology. Fabricated in a 28nm UTBB FD-SOI process with 1.8-V thick oxide …
被引用次数：5 相关文章

A 4.7 mW W-Band LNA with 4.2 dB NF and 12 dB gain using drain to gate feedback in 45nm CMOS RFSOI technology

L Gao, Q Ma, GM Rebeiz - 2018 IEEE radio frequency …, 2018 - ieeexplore.ieee.org
This paper presents a W-band low-noise amplifier using 45nm CMOS RFSOI. The amplifier
topology consists of a two-stage common-source design followed by a one-stage cascode …
被引用次数：25 相关文章

An LNA with input power match from 6.1 to 38.6 GHz, the noise-figure minimum of 1.9 dB, and employing back gate for matching

M Radpour, L Belostotski - 2022 IEEE Radio Frequency …, 2022 - ieeexplore.ieee.org
This paper proposes using the back-gate terminal of an FDSOI transistor for input power
matching. This concept is experimentally demonstrated with a 22-nm FDSOI low-noise …
被引用次数：6 相关文章

A tunable ultra low power inductorless low noise amplifier exploiting body biasing of 28 nm FDSOI technology

J Zaini, F Hameau, T Taris, D Morche… - 2017 IEEE/ACM …, 2017 - ieeexplore.ieee.org
This paper presents the design of an Ultra Low Power (ULP) inductorless Low Noise
Amplifier (LNA) based on a Common Gate (CG) architecture using the back gate control of …
被引用次数：19 相关文章

A Ku-Band Power Amplifier in 22nm FDSOI

A Haag, AÇ Ulusoy - 2024 IEEE 24th Topical Meeting on …, 2024 - ieeexplore.ieee.org
This paper presents the design of an 18 GHz power amplifier (PA) in GlobalFoundries' 22
nm fully-depleted silicon on insulator (FD-SOI) technology. The PA features a single-ended …
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One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS

S Sadlo, M De Matos, A Cathelin… - 2021 IEEE Radio …, 2021 - ieeexplore.ieee.org
In order to improve amplifiers' power gain for a close to f_max operation, a methodology to
size the embedding of any active two port is described and then applied to the design of a …
被引用次数：16 相关文章 所有 2 个版本

Record high-performance RF devices in an advanced FDSOI process enabling integrated Watt-level power amplifiers for WiFi and 5G applications

TV Dinh, BWC Hovens, M Vroubel… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
High-voltage RF active and passive devices, including LDMOS, fringe capacitors,
transformers and inductors with good RF performance, are required for building integrated …
被引用次数：3 相关文章

An 88% fractional bandwidth reconfigurable power amplifier for NB-IoT and LTE-M in 22 nm CMOS FDSOI

B Behmanesh, J Rodrigues… - 2022 IEEE Nordic …, 2022 - ieeexplore.ieee.org
A wideband power amplifier (PA), with 88% fractional bandwidth operating in the 700 MHz
to 1.8 GHz range, which covers most of the standardized narrowband internet-of-things (NB …
相关文章 所有 3 个版本

A 30 GHz Low Power & High Gain Low Noise Amplifier with Gm-Boosting in 28nm FD-SOI CMOS Technology

G Konidas, P Gkoutis, V Kolios… - 2019 8th International …, 2019 - ieeexplore.ieee.org
This paper presents a 30 GHz Low Noise Amplifier (LNA) in 28nm FD-SOI CMOS
technology for 5G applications. The LNA consists of two stages. The first stage is a cascode …
被引用次数：2 相关文章