AlGaAs is a promising material for integrated nonlinear photonics due to its intrinsic high nonlinearity. However, the challenging fabrication of deep etched AlGaAs devices makes it …
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high …
We realize an AlGaAs-on-sapphire platform through-assisted direct wafer bonding and substrate removal processes. The direct wafer bonding process is optimized concerning the …
V Van, PP Absil, JV Hryniewicz… - Journal of Lightwave …, 2001 - ieeexplore.ieee.org
We report propagation loss measurements in single-mode GaAs-AlGaAs racetrack microresonators with bending radii from 2.7/spl mu/m to 9.7/spl mu/m. The experimental data …
Recent advances in nonlinear optics have revolutionized integrated photonics, providing on- chip solutions to a wide range of new applications. Currently, state of the art integrated …
The transfer printing of aluminum gallium arsenide (AlGaAs) microdisk resonators onto a silicon-on-insulator (SOI) waveguide platform is demonstrated. The integrated resonators …
The combination of nonlinear and integrated photonics enables Kerr frequency comb generation in stable chip-based micro-resonators. Such a comb system will revolutionize …
Multi-mode waveguides are ubiquitously used in integrated photonics. Although interaction among different spatial waveguide eigenmodes can induce novel nonlinear phenomena …
We present manufacturing tolerances of cascaded silicon microring resonators fabricated in a commercial 130-nm complementary-oxide semiconductor (CMOS) foundry using 193-nm …