The band anticrossing (BAC) theory is widely used to model the bandgap energy of GaSb x
As 1-x and InSb x As 1-x materials and is based on two effects: impurity-host interaction in …

We performed pseudopotential based density functional theory (DFT) calculations for
GaSb/InAs type II superlattices (T2SLs), with bandgap errors from the local density …

The generalized gradient approximation (GGA) plus Hubbard U parameter method is
adopted to made a research on the structure and electronic properties of the As-rich InBi x …

Compositional variations in GaAs based ternary alloys have exhibited wide range
alterations in electronic properties. In the present paper, first-principles study of GaAs x Sb 1 …

The results of pseudopotential within the virtual crystal approximation (VCA) combined with
the Harrison bond-orbital model calculations of the electronic and lattice dynamic properties …

Using atomistic pseudopotential calculations we predict the evolution of the valence-band
maximum energy E υ (x, y) and conduction-band minimum energy E c (x, y) for a …

Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials
for infrared detection due to their excellent photoelectric properties and flexible and …

Antimonide-based family holds the potential for developing a new generation of mid-infrared
applications. Here, we report on the growth of InSb x As 1-x alloys on n− and p− type GaSb …

In this paper, we carried out first-principles calculations in order to investigate the structural
and electronic properties of the binary compound gallium antimonide (GaSb). This …

Pseudopotential investigation of energy band gaps and charge distribution in quasi-binary
(GaSb) 1-x (InAs) x crystals has been reported. To the best of our knowledge, there had …