A 2.4 GHz Wide-Range CMOS Current-Mode Class-D PA with HD2 Suppression for Internet of Things Applications

NS Kim - Sensors, 2024 - mdpi.com
Short-range Internet of Things (IoT) sensor nodes operating at 2.4 GHz must provide
ubiquitous wireless sensor networks (WSNs) with energy-efficient, wide-range output power …

A 2.4-GHz complementary voltage-controlled oscillator (VCO) for bluetooth-low-energy (BLE) internet-of-things (IoT) application

ACS Lee, MHW Loo, H Ramiah, CC Lim - AIP Conference …, 2024 - pubs.aip.org
This paper presents a Complementary LC Voltage-Controlled Oscillator with dual second
harmonic filtering tanks in Class-C configuration. It consists of a head and tail LC filters that …

A 8mW-RX/113mW-TX, Sub-GHz SoC with time-dithered PA ramping for LPWAN applications

H Gul, J Romme, P Mateman, J Dijkhuis… - ESSCIRC 2017-43rd …, 2017 - ieeexplore.ieee.org
This work presents a fully-integrated sub-GHz radio System on Chip (SoC) for Low-Power
Wide-Area Networks (LPWAN) and Internet of Things (IoT) applications. The receiver (RX) …

A 2.4-GHz ZigBee Transmitter Using a Function-Reuse Class-F DCO-PA and an ADPLL Achieving 22.6% (14.5%) System Efficiency at 6-dBm (0-dBm)

X Peng, J Yin, PI Mak, WH Yu… - IEEE Journal of Solid …, 2017 - ieeexplore.ieee.org
This paper describes a sub-1-V 2.4-GHz ZigBee transmitter (TX) with scalable output power
(P out) and system efficiency. It features a function-reuse class-F topology unifying the digital …

245/243GHz, 9.2/10.5 dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power Combining

B Yun, DW Park, KS Choi, HJ Song… - 2021 IEEE Asian Solid …, 2021 - ieeexplore.ieee.org
Lately, sub-THz bands are drawing attention for high data-rate communications where the H-
band (220-325GHz) is a strong candidate for the next generation (6G) wireless …

A Highly Linear and Efficient 28-GHz PA With a Psat of 23.2 dBm, P1 dB of 22.7 dBm, and PAE of 35.5% in 65-nm Bulk CMOS

A Asoodeh, HM Lavasani, M Cai… - IEEE Journal of Solid …, 2020 - ieeexplore.ieee.org
This article presents a 28-GHz power amplifier (PA) suitable for fifth-generation (5G)
wireless systems. Designed in a 65-nm bulk CMOS, the PA achieves a saturated output …

A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications

F Torres, E Kerhervé, A Cathelin… - International Journal of …, 2021 - cambridge.org
This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted
Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) …

[图书][B] High-efficiency and high-power CMOS power amplifiers for millimeter-wave applications

A Agah - 2013 - search.proquest.com
This research focuses on the analysis and design of stacked-FET power amplifiers for
millimeter-wave applications. We analyze the loss mechanisms in the stacked-FET PA circuit …

A fully integrated dual-mode highly linear 2.4 GHz CMOS power amplifier for 4G WiMax applications

D Chowdhury, CD Hull, OB Degani… - IEEE Journal of Solid …, 2009 - ieeexplore.ieee.org
In recent years, there has been tremendous interest in trying to implement the power
amplifier in CMOS, due to its cost and integration benefits. Most of the high power (watt …

Merging of RF oscillator and power amplifier to enable fully integrated transmitters for Internet-of-Things

K Xu - 2020 - researchrepository.ucd.ie
To facilitate the ever-increasing influx of the Internet-of-Things (IoT) wireless connectivity, the
investigation for power efficient and cost effective wireless devices together with the trend …