Monolithically integrated optoelectronic circuits combine optical devices such as light
sources (injection lasers and light emitting diodes) and optical detectors with solid-state …

Recent developments in opto-electronic integrated circuits (OEICs) using the InGaAsP/InP
system which is monolithically integrated with opto-electronic and electronic devices are …

We discuss approaches to achieving large scale InP-based optoelectronic integrated circuits
(OEICs) and photonic integrated circuits (PICs). During the past several years, significant …

The interface between optoelectronic devices and microelectronic circuits is the crucial
component in the further development of optical communications, calling for inexpensive …

Monolithically integrated InGaAsP heterostructure lasers (λ= 1.3 μ m) coupled to low-loss
InGaAsP waveguides are described. The integrated InGaAsP etched-mirror lasers are …

A monolithic integration of an InGaAsP laser diode together with current supplying circuit on
a single InP substrate has been achieved. Heterojunction bipolar transistors (HBT's) have …

The performance of 1.3 µm InGaAsP buried heterostructure lasers with both n-and p-type
contacts fabricated on one side is discussed. The lasers are flipchip bonded to Si wafers …

InGaAs/InP monolithic integrated circuits composed of a compact carrier-injection optical
switch and distributed feedback laser diodes are fabricated. These integrated circuits have a …

We report optical switching devices and heterojunction bipolar transistors (HBTs) in the
InGaAsP/InP material system which are designed to be fully compatible with monolithic …

InGaAsP/InP quantum well (QW) ridge waveguide lasers emitting nominally at 1310 nm
have been ''blue‐shifted''selectively (as much as 70 nm) on a full 50‐mm‐diameter wafer …