Defect energy levels within the band gaps of semiconductor crystals can strongly influence
electronic and optical properties. While many techniques exist that can characterize and …

Bandgap engineering of thin semiconductor layers and defect engineering combine to form
photorefractive (PR) quantum well structures. PR quantum wells are semi-insulating thin …

The nonequilibrium occupation of multiple defect states in inhomogeneously illuminated
crystals is demonstrated to have dramatic and previously unexpected consequences for the …

In an effort to utilize photorefractives in practical applications, it is necessary to choose a
material on the basis of cost, performance, durability and operating parameters …

The electromodulation method of photoreflectance (PR) is becoming an important tool for
the characterization of semiconductors, semiconductor interfaces and semiconductor …

Using a dual chopping scheme where both the pump beam and the probe beam are
chopped, we show that it is possible to perform photoreflectance spectroscopy with a …

We present photorefractive measurements in undoped GaAs performed at 1.06 pm, 1.32,
xm, and at u” 1.55, um. Using concentrations of EL2 that we determined through optical …

The photoreflectance spectroscopy is presented as a powerful tool for the characterisation of
semiconductor bulk and heterostructures. the advantages and possibilities offered by this …

We demonstrate a novel way to analyse carrier recombination and transport processes in
photorefractive semiconductors via the exposure characteristics of light induced diffraction …

Photoreflectance (PR) spectroscopy proved to be very useful for the characterization of
various semiconductor structures [l to 61. In most cases PR can be considered as a …