Abstract Gallium oxide (Ga2O3) usually fractures in the brittle form, and achieving large
plastic deformability to avoid catastrophic failure is in high demand. Here, ε‐Ga2O3 thin films …

Abstract Bulk‐scale (2¯ ̄2 01)‐oriented monoclinic beta‐phase gallium oxide (β‐Ga2O3)
single crystals are brittle and fracture at low compressive strains. Here, it is reported that …

Abstract β-Ga 2 O 3 is a promising ultrawide-bandgap semiconductor material for power
electronics and optical applications. However, its low hardness and cleavage nature pose …

Monoclinic gallium oxide (β− G a 2 O 3) has important applications in power devices and
deep UV optoelectronic devices because of such novel properties as a wide band gap, high …

The research on strain in epitaxial thin films has attracted lots of attention since strain in
semiconductors may significantly affect the quality of materials and the performance of …

Nanocrystalline and amorphous Ga2O3 films (≈ 200 nm) with variable structural quality are
produced by sputter‐deposition by varying the substrate temperature (Ts= 25–700° C). The …

Abstract β-Ga 2 O 3 is an ultrawide bandgap (UWBG) semiconductor with excellent
ensemble of attributes. To optimize the machining technologies and improve the mechanical …

Abstract β-Ga 2 O 3 is a promising material for the development of next-generation power
electronic and optoelectronic devices due to its exceptional properties, including ultrawide …

It is well known that metastable and transient structures in bulk can be stabilized in thin films
via epitaxial strain (heteroepitaxy) and appropriate growth conditions that are often far from …

Beta-phase gallium oxide (β-Ga 2 O 3) is a potential candidate due to its ultra-wide bandgap
and physical and chemical stabilities. However, its deformation and fracture behaviors are …