The evolution of silicon cryoetching is reported in this topical review, from its very first
introduction by a Japanese team to today's advanced technologies. The main advances in …

The Si O x F y passivation layer created on structure sidewalls during silicon cryoetching is
investigated. This Si O x F y passivation layer formation strongly depends on O 2 content …

Inductively coupled plasma (ICP) cryogenic dry etching was used to etch submicron pores,
nano contact lines, submicron diameter pillars, thin and thick cantilevers, membrane …

Cryogenic silicon etching in inductively coupled SF 6∕ O 2 plasma has been studied,
especially the behavior of mask materials. Suitability of eight different mask materials for …

The aim of this work is to demonstrate the ability of our system to etch deep high aspect ratio
trenches (HART's) with a high etch rate (> 5μm/min), high selectivity, no local bowing [M …

Passivation mechanisms of Si trenches involved in SF 6/O 2 cryogenic plasma etching were
investigated in order to better control the process and avoid defects. Trench sidewalls and …

Deep and narrow anisotropic etching of silicon structures has been investigated in a low-
pressure high density plasma reactor working with a cryogenic chuck. We have previously …

The oxyfluorinated silicon passivation layer created during various cryoetching processes is
of interest in order to improve high aspect ratio profiles. In this work, the desorption of a SiO x …

An intensive study has been performed to understand and tune deep reactive ion etch
(DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and …

Abstract A cryogenic SF 6/O 2 plasma process has been used to investigate the etching of
deep holes in silicon wafers. The influence of crystallographic and aspect ratio dependence …