Temperature dependence of the band gap of GaSb1− xBix alloys with 0< x≤ 0.042 determined by photoreflectance
J Kopaczek, R Kudrawiec, WM Linhart… - Applied Physics …, 2013 - pubs.aip.org
GaSb 1− x Bi x layers with 0< x≤ 0.042 have been studied by photoreflectance in 15–290 K
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …
Theoretical and experimental studies of electronic band structure for GaSb1− xBix in the dilute Bi regime
Photoreflectance (PR) spectroscopy was applied to study the band gap in GaSb 1− x Bi x
alloys with Bi< 5%. Obtained results have been interpreted in the context of ab initio …
alloys with Bi< 5%. Obtained results have been interpreted in the context of ab initio …
Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films
L Yue, X Chen, Y Zhang, F Zhang, L Wang… - Journal of Alloys and …, 2018 - Elsevier
Epitaxial growth of GaSb 1–x Bi x thin films on GaSb (100) substrates were studied by
varying V/III ratio, growth temperatures and Bi flux using molecular beam epitaxy. It is …
varying V/III ratio, growth temperatures and Bi flux using molecular beam epitaxy. It is …
Low-and high-energy photoluminescence from GaSb1− xBix with 0< x≤ 0.042
J Kopaczek, R Kudrawiec, W Linhart… - Applied Physics …, 2014 - iopscience.iop.org
Two photoluminescence (PL) peaks were observed in temperature-dependent PL spectra of
GaSb 1− x Bi x layers with 0< x≤ 0.042. The high-energy (HE) peak was found to be …
GaSb 1− x Bi x layers with 0< x≤ 0.042. The high-energy (HE) peak was found to be …
[HTML][HTML] High Bi content GaSbBi alloys
The epitaxial growth, structural, and optical properties of GaSb 1–x Bi x alloys have been
investigated. The Bi incorporation into GaSb is varied in the range 0< x≤ 9.6% by varying …
investigated. The Bi incorporation into GaSb is varied in the range 0< x≤ 9.6% by varying …
Growth and properties of GaSbBi alloys
Molecular-beam epitaxy has been used to grow GaSb 1− x Bi x alloys with x up to 0.05. The
Bi content, lattice expansion, and film thickness were determined by Rutherford …
Bi content, lattice expansion, and film thickness were determined by Rutherford …
Optical functions of bulk and epitaxial GaSb from 0.0025 to 6 eV
The complex refraction index and dielectric functions of GaSb bulk (both p and n-type) and
MBE film were accurately determined from 0.0025 to 6 eV by using reflectance and …
MBE film were accurately determined from 0.0025 to 6 eV by using reflectance and …
[HTML][HTML] Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys
J Kopaczek, MK Rajpalke, WM Linhart… - Applied Physics …, 2014 - pubs.aip.org
Molecular beam epitaxy is used to grow Ga 1− y In y Sb 1− x Bi x (y≤ 5.5% and x≤ 2.5%)
and Al y Ga 1− y Sb 1− x Bi x alloys (y≤ 6.6% and x≤ 2.0%). The alloy composition and film …
and Al y Ga 1− y Sb 1− x Bi x alloys (y≤ 6.6% and x≤ 2.0%). The alloy composition and film …
Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
R Kudrawiec, J Kopaczek, O Delorme… - Journal of Applied …, 2019 - pubs.aip.org
To determine the band alignment at the GaSb 1-x Bi x/GaSb interface, a set of GaSb 1-x Bi
x/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi≤ 12%) …
x/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi≤ 12%) …
Growth of GaSb1− xBix by molecular beam epitaxy
Y Song, S Wang, I Saha Roy, P Shi… - Journal of Vacuum …, 2012 - pubs.aip.org
Molecular beam epitaxy for GaSb 1− x Bi x is investigated in this article. The growth window
for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and …
for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and …