Feature profiles of Si etched in HBr-containing plasmas have been analyzed through a
comparison between experiments and simulations. The emphasis was placed on a …

Feature profiles of poly-Si etched in Cl 2/O 2 plasmas have been analyzed through a
mechanistic comparison between experiments and simulations. The emphasis was placed …

Coupling reactor-scale models of plasma etching equipment to device-scale models of
feature profile evolution offers the potential for increased levels of virtual design of both …

Etching yields of silicon in F 2, Cl 2, Br 2, and HBr high density plasmas have been
measured as a function of ion bombardment energy, ion bombardment angle, and plasma …

Profile evolution of trenches and lines, both nested and isolated, during etching with Cl 2,
HBr, and HCl plasmas in a high density, commercial etch tool was investigated. Features …

Energetic ion bombardment during plasma etching of microelectronics devices is necessary
to activate chemical process and define features through the ions' anisotropic trajectories …

We have developed a semiempirical feature scale model of Si etching in SF 6∕ O 2∕ H Br
plasma. Surface kinetics are modeled using parameters that describe F-based Si etching in …

Etching in semiconductor processing typically involves using halides because of the
relatively fast rates. Bromine-containing plasmas can generate high aspect ratio trenches …

A sheath is generated over the rf biased substrate in etching processes, its properties play
an important role in determining the transport of reactant species including ions and neutrals …

Atomic-or nanometer-scale surface roughening and rippling during Si etching in high-
density Cl 2 and Cl 2/O 2 plasmas have been investigated by developing a three …