Abstract Knowledge about the temperature dependence of the fundamental band-gap
energy of semiconductors is very important and constitutes the basis for developing …

As one typical heavy metal, bismuth has been known as the most diamagnetic of all metals,
and the thermal conductivity is lower than any metal except mercury. It also has a high …

Bandstructure properties of dilute bismide bulk systems are calculated using density
functional theory. An extended band anti-crossing model is introduced to fit the obtained …

Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

We report on photoluminescence measurements of GaAs (1− x) Bi x thin films containing
dilute concentration (x≤ 0.045%) of isoelectronic impurity Bi. At a temperature of 4 K, we …

Dilute bismide alloys are III–V semiconductor alloys containing small fractions of
substitutional bismuth (Bi) atoms. The theoretical modeling of dilute bismide alloys is …

The electronic structure of bulk GaAs 1− x Bi x systems for different atomic configurations
and Bi concentrations is calculated using density functional theory. The results show a Bi …

Dilute bismide III-V semiconductors have many unique properties and have been
extensively investigated in recent decades. As the development of material research has …

In this study, we investigate the structural, electronic, optical, and thermodynamic properties
of bismides alloys GaSb1− x Bi x (x= 0, 0.25, 0.50, 0.75, and 1), in the framework of (PBE …

Critical point transition energies and optical functions of the novel GaAs-based dilute
bismide alloys GaAsBi, GaNAsBi, and GaPAsBi were determined using spectroscopic …