Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration
High quality InN nanoparticles are grown using an atmospheric chemical vapour deposition
technique via a self-seeded catalytic approach in the temperature range of 580–650° C. In …
technique via a self-seeded catalytic approach in the temperature range of 580–650° C. In …
Morphology of InN nanorods using spectroscopic Raman imaging
We report the vibrational properties of vertical and oblique InN nanorods (NRs) grown by
molecular beam epitaxy (MBE). Surface optical (SO) Raman mode at 561 cm− 1, belonging …
molecular beam epitaxy (MBE). Surface optical (SO) Raman mode at 561 cm− 1, belonging …
Growth and optical properties of high-density InN nanodots
High density InN/GaN nanodots were grown by pulsed mode (PM) metal–organic chemical
vapor deposition (MOCVD). InN nanodots density of up to∼ 5× 1010cm− 2 at a growth …
vapor deposition (MOCVD). InN nanodots density of up to∼ 5× 1010cm− 2 at a growth …
Effect of strain relaxation and the Burstein–Moss energy shift on the optical properties of InN films grown in the self-seeded catalytic process
For the first time, high optical quality InN films were grown on a sapphire substrate using the
atmospheric chemical vapour deposition technique in the temperature range of 560–650° C …
atmospheric chemical vapour deposition technique in the temperature range of 560–650° C …
Raman scattering by longitudinal optical phonons in InN nanocolumns grown on Si (1 1 1) and Si (0 0 1) substrates
S Lazić, E Gallardo, JM Calleja, F Agulló-Rueda… - Physica E: Low …, 2008 - Elsevier
Raman measurements in high-quality InN nanocolumns and thin films grown on both Si
(111) and Si (100) substrates display a low-energy coupled LO phonon–plasmon mode …
(111) and Si (100) substrates display a low-energy coupled LO phonon–plasmon mode …
Nonequilibrium plasma aerotaxy of InN nanocrystals and their photonic properties
NB Uner, DM Niedzwiedzki… - The Journal of Physical …, 2019 - ACS Publications
A recently introduced gas-phase method for the synthesis of III–V semiconductor
nanocrystals (NCs), termed nonequilibrium plasma aerotaxy, is extended to the synthesis of …
nanocrystals (NCs), termed nonequilibrium plasma aerotaxy, is extended to the synthesis of …
Observation of phonon sideband emission in intrinsic InN nanowires: a photoluminescence and micro-Raman scattering study
In this work, photoluminescence and micro-Raman scattering experiments were performed
on undoped InN nanowires. It was found that, besides the main photoluminescence peak, a …
on undoped InN nanowires. It was found that, besides the main photoluminescence peak, a …
Surface-plasmon resonances in indium nitride with metal-enriched nano-particles
TV Shubina, DS Plotnikov, A Vasson, J Leymarie… - Journal of crystal …, 2006 - Elsevier
Plasmonic resonances in In-enriched nano-particles, spontaneously formed during growth,
can dramatically modify optical properties of InN. Experimental support for this is provided …
can dramatically modify optical properties of InN. Experimental support for this is provided …
Growth of InN quantum dots to nanorods: a competition between nucleation and growth rates
Growth evolution of InN nanostructures via a chemical vapor deposition technique is
reported using In2O3 as a precursor material and NH3 as reactive gas in the temperature …
reported using In2O3 as a precursor material and NH3 as reactive gas in the temperature …
Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film
We report the synthesis of colloidal InN nanocrystals (InN-NCs) in organic solution through
nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN …
nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN …