Homoepitaxial GaAs layers were grown by low-pressure metalorganic vapor phase epitaxy
(MOVPE), by using the metalorganic precursors trimethylgallium (TMGa) and the low …

The carbon doping behavior of trimethylarsenic (TMAs) in low-pressure metalorganic vapor
phase epitaxy (LP-MOVPE) of GaAs was studied in the temperature range of 550 to 700° C …

The limits of intrinsic carbon incorporation in very high purity GaAs grown by atmospheric
pressure metalorganic vapor phase epitaxy (MOVPE) were investigated by using a MOVPE …

GaAs layers heavily doped with carbon were grown by MOVPE using trimethylarsine (TMAs)
and trimethylgallium (TMGa). SIMS analysis and Hall effect measurements were performed …

The incorporation of Te into the crystal lattice, when it is used as an n-type dopant for GaAs
grown by metalorganic vapor phase epitaxy, is studied. For this purpose, several growth …

Heavily carbon doped GaAs epitaxial layers were grown by low-pressure MOVPE using
TMGa and TEAs as the source materials. GaAs epitaxial layers with hole concentrations up …

The carbon doping properties of GaAs grown by low pressure (30 Torr) organometallic
vapor phase epitaxy at 520–700° C with CCl4 as the dopant precursor were compared for …

Very high C incorporation (> lo*'cm-3) in GaAs was achieved by atmospheric pressure
metalorganic vapor phase epitaxy (AP-MGVPE) using CClb as a dopan; gas. Hole densities …

Dependence of doping on substrate orientation for GaAs: C grown by OMVPE -
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Heavily carbon-doped GaAs epi-layers are successfully obtained in metalorganic vapor
phase epitaxy using trimethylarsine ((CH 3) 3 As: TMAs) and triethylgallium ((C 2 H 5) 3 Ga …