Ohmic contact properties of Ni/C film on 4H-SiC
W Lu, WC Mitchel, GR Landis, TR Crenshaw… - Solid-State …, 2003 - Elsevier
Ohmic contact formation of Ni/C film on n-type 4H-SiC is investigated. A carbon interfacial
layer between Ni film and SiC is used to improve ohmic contact properties. The contact …
layer between Ni film and SiC is used to improve ohmic contact properties. The contact …
Catalytic graphitization and Ohmic contact formation on 4H–SiC
W Lu, WC Mitchel, GR Landis, TR Crenshaw… - Journal of Applied …, 2003 - pubs.aip.org
Electrical contact properties and graphitic structures of metal/carbon/4H–SiC structures are
investigated. Metals studied include Ni, Co, Cr, NiCr, Ti, W, Mo, Al, and Au. Ohmic contacts …
investigated. Metals studied include Ni, Co, Cr, NiCr, Ti, W, Mo, Al, and Au. Ohmic contacts …
Electrical contact behavior of Ni/C60/4H–SiC structures
W Lu, WC Mitchel, GR Landis, TR Crenshaw… - Journal of Vacuum …, 2003 - pubs.aip.org
A C60 interfacial layer between a Ni film and SiC improves the Ohmic contact properties
significantly. The C60 film is deposited by the Langmuir–Blodgett method prior to the Ni film …
significantly. The C60 film is deposited by the Langmuir–Blodgett method prior to the Ni film …
Effect of surface preparation on Ni Ohmic contact to 3C-SiC
JI Noh, KS Nahm, KC Kim, MA Capano - Solid-State Electronics, 2002 - Elsevier
The effect of roughness and chemical treatment of 3C-SiC film surface on Ni ohmic contact
was studied in this work. 3C-SiC (111) film was grown on Si (111) in a chemical vapor …
was studied in this work. 3C-SiC (111) film was grown on Si (111) in a chemical vapor …
Effect of graphite related interfacial microstructure created by high temperature annealing on the contact properties of Ni/Ti/6H-SiC
TY Zhou, XC Liu, CC Dai, W Huang, SY Zhuo… - Materials Science and …, 2014 - Elsevier
Ni/Ti bilayer contacts were prepared on n-type 6H-SiC, and the formation mechanism of
Ohmic contact was discussed. The electrical properties and microstructure of the Ni/Ti …
Ohmic contact was discussed. The electrical properties and microstructure of the Ni/Ti …
Carbon structural transitions and ohmic contacts on 4H-SiC
W Lu, WC Mitchel, CA Thornton, GR Landis… - Journal of Electronic …, 2003 - Springer
The structural properties of sputtered carbon films on SiC are investigated using X-ray
photoelectron spectroscopy (XPS) and Raman scattering. The as-deposited films are …
photoelectron spectroscopy (XPS) and Raman scattering. The as-deposited films are …
Origin of ohmic behavior in Ni, Ni2Si and Pd contacts on n-type SiC
B Barda, P Macháč, S Cichoň, V Machovič… - Applied Surface …, 2010 - Elsevier
Ni, Ni2Si and Pd contacts were prepared on n-type 4H-SiC and annealed in the temperature
range of 750–1150° C. The annealed contacts were analyzed before and after acid etching …
range of 750–1150° C. The annealed contacts were analyzed before and after acid etching …
Microstructural interpretation of Ni ohmic contact on n-type 4H–SiC
Using cross-sectional transmission electron microscopy (TEM), microstructural changes in
Ni contacts on n-type 4H–SiC as a function of annealing temperature were investigated …
Ni contacts on n-type 4H–SiC as a function of annealing temperature were investigated …
Ohmic contact formation mechanism of Ni on -type 4H–SiC
Ohmic contact formation mechanism of Ni on n-type 4H–SiC is proposed by comparing the
electrical properties with microstructural change. The ohmic behavior was observed at …
electrical properties with microstructural change. The ohmic behavior was observed at …
Fabrication of Ohmic contact on semi-insulating 4H-SiC substrate by laser thermal annealing
Y Cheng, W Lu, T Wang, Z Chen - Journal of Applied Physics, 2016 - pubs.aip.org
The Ni contact layer was deposited on semi-insulating 4H-SiC substrate by magnetron
sputtering. The as-deposited samples were treated by rapid thermal annealing (RTA) and …
sputtering. The as-deposited samples were treated by rapid thermal annealing (RTA) and …