We study coherent electronic transport in charge-density-tunable microdevices patterned
from thin films of the topological insulator (TI) Bi 2 Se 3. The devices exhibit pronounced …

We show that a number of transport properties in topological insulator (TI) Bi 2 Se 3 exhibit
striking thickness dependences over a range of up to five orders of thickness (3 nm–170 …

We consider in our work single crystal thin films of Bi 2 Se 3, grown by molecular beam
epitaxy, both with and without Pb doping. Angle-resolved photoemission data demonstrate …

The two-dimensional surface of the three-dimensional topological insulator is in the
symplectic universality class and should exhibit perfect weak antilocalization reflected in …

In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating,
should not provide any electric coupling between the two metallic surfaces. However …

With high quality topological insulator Bi 2 Se 3 thin films, we report thickness-independent
transport properties over wide thickness ranges. Conductance remained nominally constant …

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi 2
Se 3 in an electric field effect geometry. By doping the bulk crystals with Ca, we are able to …

A key challenge in condensed matter research is the optimization of topological insulator (TI)
compounds for the study and future application of their unique surface states. Truly …

We study the low-temperature transport properties of Bi2Se3 thin films grown by magnetron
sputtering. A positive magnetoresistance resulting from the weak antilocalization (WAL) …

In addition to the weak antilocalization cusp observed in the magnetoresistance (MR) of
topological insulators at low temperatures and low magnetic fields, we find that the high-field …