Methods are provided for integrating atomic layer etch and atomic layer deposition by
performing both processes in the same chamber or reactor. Methods involve sequentially …

Methods are provided for integrating atomic layer etch and atomic layer deposition by
performing both processes in the same chamber or reactor. Methods involve sequentially …

Methods and apparatuses for depositing films in high aspect ratio features and trenches
using a post-dose treatment operation during atomic layer deposition are provided. Post …

Methods and apparatuses for depositing films in high aspect ratio features and trenches
using a post-dose treatment operation during atomic layer deposition are provided. Post …

Abstract Systems and methods for insitu post atomic layer deposition (ALD) destruction of
active species are provided. ALD processes deposit multiple atomic layers on a substrate …

Methods and apparatuses for depositing films in high aspect ratio features and trenches on
substrates using atomic layer deposition and deposition of a sacrificial layer during atomic …

Methods and apparatuses for etching semiconductor material on substrates using atomic
layer etching by chemisorption, by deposition, or by both chemisorption and deposition …

BACKGROUND Embodiments of the invention generally relate to an appa ratus and a
method for depositing materials. More specifi cally, embodiments of the invention are …

An atomic layer deposition method includes positioning a semiconductor substrate within an
atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the …

An atomic layer deposition method includes positioning a plurality of semiconductor wafers
into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas …