A unique structure of GaAs/6H-SiC/InGaN metal–semiconductor field-effect transistor has
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal …

In this paper we proposed a new structure of GaAsP/6H-SiC/GaN Power semiconductor field
effect transistor with undoped region under gate. The device is made of semiconductor …

The main purpose of this paper is to inquire about the DC and AC performances of
AlGaN/GaN high electron mobility transistors structure based on innovational II-N materials …

AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed,
simulated and fabricated. DC, S-parameter and power measurements were also performed …

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-
Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design …

In this study, a high-performance InAlN/GaN high electron mobility transistor (HEMT) was
fabricated using low-temperature microwave annealing (MWA) as the ohmic metal alloy …

High output power AlGaN/GaN metal-insulator-semiconductor (MIS) hetero-junction field
effect transistor (HFET) on Si substrate for millimeter-wave application has developed. High …

Heterojunctions on SiC is an area in rapid development, especially GaN/SiC and AlGaN/SiC
heterojunctions. The heterojunction can improve the performance considerably for BJTs and …

In this work, we present the simulation results for nitride-based fin-shaped field-effect
transistors (FinFETs) using a technology computer-aided design (TCAD) device simulator …

AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors
(MISHFETs) with different thickness of in-situ silicon carbon nitride (SiCN) cap layer were …