Nonradiative recombination (NRR) centers in GaAs: N δ-doped superlattice (SL) structure
grown by metal organic vapor phase epitaxy (MOVPE) are studied by two-wavelength …

We use two-wavelength-excited photoluminescence (PL) to investigate nonradiative
recombination (NRR) centers in GaAs: N δ-doped superlattice (SL) structures grown by …

Nonradiative recombination (NRR) centers in GaAs: N δ-doped superlattices (SLs) grown by
molecular beam epitaxy (MBE) has been investigated by two-wavelength excited …

In this study, we examined the E− band luminescence of a GaAs: N δ-doped superlattice
(SL) grown by metal organic vapor phase epitaxy with 0.15% nitrogen (N) using two …

We present a study of the photoluminescence (PL) properties of heavily Be delta-doped
GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures …

The specific luminescence process in GaAs doping superlattices arises from recombination
of electrons populating low-index conduction subbands with holes in the acceptor impurity …

Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1
nm GaAs single quantum well heterostructures (SQWH's) confined by GaAs/AlAs short …

The temperature evolution of the main photoluminescence (PL) mechanisms, in GaAs
quantum wells embedded in short-period AlAs/GaAs superlattices, is investigated. PL …

The repartition of non radiative recombination centers density in a quantum well has been
tested by time resolved luminescence in samples containing an Indium plane inside a 16 nm …

Intrinsic and extrinsic photoluminescence (PL) transitions originating from wells and barriers
have been observed in both undoped and Si-doped GaAs Ga 0.52 In 0.48 P quantum well …