Thermal and PECVD deposited silicon dioxide and organosilicate low-k materials with
porosity from 24 to 44% and corresponding k values from 2.5 to 2.0 were sputtered in dual …

Plasma parameters such as electron density, electron-collision rate, resonance frequency
and the bias voltage were shown to be important for the characterization of radio-frequency …

In this work, we present results of a study of low-energy (Е i< 200 eV) sputtering of Co and
Mo nanometer thin films in high-density argon plasma of a low-pressure radio-frequency …

The deposition of SiOx containing films on NaCl and KBr particles in dielectric barrier
discharge under atmospheric pressure was investigated. As precursor …

The paper studies the plasma-assisted chemical vapor deposition of aC: H: SiO x coatings in
plasma of non-self-sustained arc discharge with a hot cathode combined with inductively …

A model that combines the Monte Carlo method for calculating electron and ion trajectories
in three-dimensional geometry and an analytic approach developed for calculating an …

Dust particle formation dynamics in the process of SiO x film deposition from a SiH 4 and N 2
O gas mixture by a low frequency plasma enhanced chemical vapor deposition have been …

A remote plasma enhanced chemical vapour deposition (RPECVD) reactor has been
developed to deposit silicon oxide films. It consists of a microwave discharge (created by …

We investigated the effects of discharge frequency on the characteristics of polycrystalline-
silicon etching rates and on the etching selectivity on the gate oxide (SiO/sub 2/). An …

Radiofrequency (13.56 MHz) plasma enhanced chemical vapor deposition process is used
for deposition of SiOx films on bell metal substrates using Ar/hexamethyldisiloxane/O2 glow …