A silicon pn junction has been mapped using electron beam induced current in both a
scanning transmission electron microscope (STEM) and a conventional scanning electron …

Simulations of the electrostatic potential in a thin sample that contains a single Si pn junction
have been carried out in order to examine the effect of different boundary conditions at the …

On cross sections through semiconductor devices, the electron‐beam‐induced current
(EBIC) mode of the scanning electron microscope yields two‐dimensional information on the …

Electron holography is used to measure electrostatic potential profiles across reverse-
biased Si p− n junctions in situ in the transmission electron microscope. A novel sample …

Off-axis electron holography is used to measure electrostatic potential profiles across a
silicon pn junction, which has been prepared for examination in the transmission electron …

The internal electric field of a 2D PN junction of a semiconductor is mapped out by two
techniques: measuring the deflection of the transmitted beam in micro-STEM mode with …

Off‐axis electron holography in the transmission electron microscope (TEM) is used to
measure two‐dimensional electrostatic potentials in both unbiased and reverse biased …

Off-axis electron holography and tomography have been combined to examine the 3-D
electrostatic potential associated with a thin specimen containing a Si pn junction. The …

High-resolution electron beam induced current (EBIC) analyses were carried out on a
shallow ion implanted p+–n silicon junction in a scanning electron microscope (SEM) and a …

Two-dimensional finite element simulations of electrostatic dopant potentials in parallel-
sided semiconductor specimens that contain p–n junctions are used to assess the effect of …