This paper investigates the electrical behavior and performance of a Dual Metal Gate
Overlap on Drain Side Tunnel Field Effect Transistor with Spacer (DMG-ODS-TFET) in 10 …

Two-dimensional analytical modelling of Dual Material Gate Tunnel Field Effect Transistor
with change in variation of gate oxide thickness (DMG-UOX-TFET) is proposed in this work …

This paper presents a design and analysis of a Hetero Dielectric Dual Material Gate
Underlap Spacer Tunnel Field Effect Transistor, aiming to enhance device performance and …

In this paper, we propose and simulate a novel double gate tunnel field effect transistor (DG-
TFET) employing a metallic drain and a gate-drain underlap. The use of a metallic drain and …

In this work, a Symmetrical Dual Gate Tunnel Field Effect Transistor (SDGTFET) is proposed
with gate dielectric materials in 10nm technology. The electrical performance parameters of …

Effects of the spacer-drain overlap on the performance parameters of the double gate tunnel
field effect transistor is proposed and investigated in this paper. By proper fabrication of the …

In this paper, we propose, design and simulate a new double gate (DG) tunnel field effect
transistor (TFET), using germanium (Ge) source, dual dielectric gate oxide, gate/drain …

Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high
on-current and reduced inverter delay simultaneously. In order to analyze the proposed …

In this paper, an optimally designed double metal gate dopingless tunnel field effect
transistor (DMG-DLTFETs) with high dielectric material spacer is investigated. With the …

This paper proposes a unique Tunnel Field-Effect Transistor (TFET) structure in which the
gate oxide is modified, and the performances of the device are analyzed using Sentaurus …