Group III–V semiconductors are based on the elements of groups III and V of the periodic
table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys …

We propose several designs of nonlinear optical waveguides based on quaternary III-V
semiconductors AlGaAsSb and InGaAsP. These semiconductor materials have been widely …

Practical applications implementing integrated photonic circuits can benefit from nonlinear
optical functionalities such as wavelength conversion, all-optical signal processing, and …

Group-IV semiconductor compounds with intense optical nonlinearity have emerged as a
new branch of all-optical processing materials benefiting from the manufacturing …

Group IV photonics hold great potential for nonlinear applications in the near-and mid-
infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index …

We demonstrated a class of highly nonlinear hybrid waveguide structures based on
infiltration of As_2S_3 chalcogenide glass into silicon slot waveguides. The nonlinear …

In this work, we present a nonlinear silicon nitride waveguide. These waveguide are
fabricated by readily available PECVD, conventional contact UV-lithography and high …

Nonlinear silicon photonics has shown an ability to generate, manipulate, and detect optical
signals on an ultracompact chip at a potential low cost. There are still barriers hindering its …

Integrated photonics has been pursued on a large variety of materials and platforms over
more than half a century. In recent decades, silicon has emerged as the preferred optical …

Although the first lasers invented operated in the visible, the first on-chip devices were
optimized for near-infrared (IR) performance driven by demand in telecommunications …