As CMOS is approaching the 22nm node, the importance of high-mobility materials such as
Ge and GaAs is rapidly increasing. For the timely development of these new technologies …

Contact resistivity reduction at the source/drain contacts is one of the main requirements for
the fabrication of future MOS devices. Current research focuses on methods to increase the …

We have investigated the carrier concentration profiles in molecular-beam epitaxy-grown, Si-
implanted, low-temperature (LT) GaAs. The samples were grown at 300° C and the Schottky …

Simultaneous reflection high-energy electron diffraction and reflectance difference
spectroscopy measurements are used to monitor characteristic changes in the short-and …

Germanium offers higher electron and hole mobility than silicon, making it an attractive
option for future high-performance MOSFET applications. To date, Ge p-channel device …

In this paper, we present the theory for calculating Raman line shapes as functions of the
Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities …

There is a developing interest in the use of atomic plane or δ‐doping to produce narrow
dopant spikes in molecular beam epitaxy GaAs. It is of importance to measure the dopant …

One of the greatest challenges for future CMOS generations is to limit the series resistance
of source/drain junctions and their contacts to a small fraction of the channel 'on'resistance …

The introduction of high mobility channel materials together with new device structures with
improved subthreshold slope provides a pathway into continuing the performance scaling of …

Si atomic plane or delta (delta)-doping of GaAs during MBE has been investigated using
SIMS profiling optimised for high depth resolution. For layers in which almost all the Si atoms …