Incorporation of lithium in (111) NiO epitaxial layers grown using the pulsed layer deposition
technique on c-sapphire substrates is studied as functions of growth conditions. The effect of …

NiO thin films containing up to 60 mol% Li were deposited on an ultra smooth sapphire
(0001) substrate at room-temperature (RT) by the pulsed laser deposition (PLD) process …

NiO films are grown on c-sapphire substrates using pulsed laser deposition technique at
different growth temperatures. Both in-plane and out of plane X-ray diffraction studies reveal …

(111) NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures
ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two …

10 at% Li doped NiO thin films were prepared on glass and sapphire single crystal
substrates by using pulsed-laser deposition (PLD) process. The effects of the substrate and …

Li-doped NiO epitaxial films with high electrical conductivity and atomically flat stepped
surfaces were fabricated by a combined technique of pulsed laser deposition and …

Lattice parameter of NiO layers deposited using pulsed laser deposition is determined
accurately using three parallel Bragg reflections. A small decrease in out of plane lattice …

Epitaxial thin films of NiO (l 11) were successfully fabricated on a-Al2O3 (0001) substrates at
room temperature using a pulsed laser deposition method. The oxygen pressure and laser …

NiO films were deposited on glass and Si (100) substrates by reactive pulsed laser
deposition from the Ni target. Nd: YAG laser (1064 nm) was used. The oxygen pressure was …

Crystalline thin films of NiO and nominally 20 at.% Li-doped NiO were deposited at room
temperature by pulsed laser deposition on the lattice matched MgO (100) substrate. As …