A V-band power amplifier with transformer combining and neutralization technique in 40-nm COMS
JK Wang, YH Lin, YH Hsiao, KS Yeh… - 2017 IEEE International …, 2017 - ieeexplore.ieee.org
A V-band transformer-base power amplifier (PA) is implemented in 40nm CMOS. It is a three-
stage PA with eight-way transformer combining at output stage. This PA uses the …
stage PA with eight-way transformer combining at output stage. This PA uses the …
A K-band transformer based power amplifier with 24.4-dBm output power and 28% PAE in 90-nm CMOS technology
JL Lin, YH Lin, YH Hsiao… - 2017 IEEE MTT-S …, 2017 - ieeexplore.ieee.org
A fully integrated K-band transformer based power amplifier with neutralization technique is
proposed and fabricated in 90-nm CMOS technology. Several cascode cells are combined …
proposed and fabricated in 90-nm CMOS technology. Several cascode cells are combined …
A transformer-coupled power amplifier in 90-nm CMOS process for V-band applications
JC Chen, WH Chiu, YC Chiang - 2017 IEEE Asia Pacific …, 2017 - ieeexplore.ieee.org
In this paper, a three-stage common-source power amplifier (PA) fabricated in the TSMC 90-
nm CMOS process technology for V-band applications is presented. The proposed PA …
nm CMOS process technology for V-band applications is presented. The proposed PA …
A 60 GHz transformer-based variable-gain power amplifier in 90nm CMOS
J Brinkhoff, K Kang, DD Pham… - 2009 IEEE International …, 2009 - ieeexplore.ieee.org
A power amplifier, suitable for short-range 60 GHz applications, is designed. The amplifier
features two differential stages, using transformers for single-ended to differential …
features two differential stages, using transformers for single-ended to differential …
A K-band compact fully integrated transformer power amplifier in 0.18-μm CMOS
CC Kuo, YH Lin, HC Lu, H Wang - 2013 Asia-Pacific …, 2013 - ieeexplore.ieee.org
A K-band, 24 GHz, fully integrated transformer power amplifier (PA) is designed and
fabricated in the standard 0.18-μm deep N-well (DNW) CMOS technology. This power …
fabricated in the standard 0.18-μm deep N-well (DNW) CMOS technology. This power …
A 14.8 dBm 20.3 dB power amplifier for D-band applications in 40 nm CMOS
D Simic, P Reynaert - 2018 IEEE Radio Frequency Integrated …, 2018 - ieeexplore.ieee.org
This paper presents a high output power, high gain, class-AB power amplifier (PA) in 40 nm
CMOS technology for D-band applications. Two-way transformer-based power-combining is …
CMOS technology for D-band applications. Two-way transformer-based power-combining is …
A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm2 Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS
A fully integrated 27-GHz transformer based power amplifier with neutralization technique
and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several …
and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several …
A 60-GHz 1.2 V 21 dBm power amplifier with a fully symmetrical 8-way transformer power combiner in 90 nm CMOS
A 60-GHz 1.2 V power amplifier (PA) using fully symmetrical 8-way transformer power
combiner is designed in 90 nm CMOS. The fully symmetrical transformer power combiner …
combiner is designed in 90 nm CMOS. The fully symmetrical transformer power combiner …
A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology
A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm
CMOS technology. The stack configuration overcomes the low breakdown voltages of …
CMOS technology. The stack configuration overcomes the low breakdown voltages of …
A V-band Power Amplifier for Satellite Communications in 40-nm CMOS
H Wan, D Zhao - 2022 IEEE International Conference on …, 2022 - ieeexplore.ieee.org
This paper presents a V-band power amplifier (PA) with two stages. Each stage consists of a
neutralized common-source amplifier pair, coupled with each other using a transformer …
neutralized common-source amplifier pair, coupled with each other using a transformer …