A rate-equation model, in which three discrete quantum-dot (QD) energy levels are assumed
and all possible relaxation paths and carrier transport in the GaAs barrier are considered, is …

In this paper, for the first time, we present a circuit model of InGaAs-GaAs self-assembled
quantum dot (QD) lasers (SAQDLs) based on the standard rate equations. By using the …

Experimental and theoretical study of the self-heating effect on the two-state lasing
behaviors in 1.3-µm self-assembled InAs–GaAs quantum dot (QD) lasers is presented …

In this paper, a theoretical model is used to investigate the lasing characteristics of
InGaAs/GaAs quantum-dot lasers. The rate equations for InGaAs/GaAs are numerically …

In this paper, we present the results of a theoretical model built to describe the temperature-
dependent lasing characteristics of InAs-InGaAs quantum-dot (QD) lasers operating at …

The effects of temperature (homogeneous broadening (HB)) on output power, gain
spectrum, and light–current (L–I) characteristics of self-assembled quantum-dot lasers …

The modal gain and differential gain of 1.3-mum p-doped and undoped InAs/GaAs quantum-
dot (QD) lasers have been investigated as a function of injection current under different …

The important tradeoff between frequency bandwidth and single-mode behavior of
multimode self-assembled InAs-GaAs quantum-dot (QD) laser by increasing temperature or …

The optical performance of quantum dot lasers with different dots-in-a-well (DWELL)
structures is studied as a function of the well number and the indium composition in the …

This paper presents the lasing properties and their temperature dependence for 1.3-/spl
mu/m semiconductor lasers involving self-assembled InGaAs-GaAs quantum dots as the …