Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC
MOSFETs) are widely used in higher power density and higher efficiency power electronic …

In high-power applications, parallel connection of discrete silicon carbide (SiC) mosfet s is
necessary to increase the current rating. However, the unbalanced dynamic current during …

Featuring higher switching speed and lower losses, the silicon carbide mosfets (SiC
mosfets) are widely used in higher power density and higher efficiency power electronic …

Series connection of individual semiconductors is an effective way to achieve higher voltage
switches. However, the inherent unequal dynamic voltage sharing problem needs to be …

Limited by low availability, high price, and poor switching performance of high-voltage
power devices, connecting low-voltage devices in series to block much higher voltages is …

In high power applications of silicon carbide (SiC) MOSFETs where parallelism is employed,
current unbalance can occur and affect the performance and reliability of the power devices …

Recently, with research and development of SiC power devices, 1.2 kV SiC MOSFETs have
become commercially available. The parasitic parameters, such as output capacitance, in …

This paper presents a novel compact circuit combining function of gate control and voltage
balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect …

Wide-bandgap devices, such as silicon carbide and gallium nitride, have high switching
speed potential. However, the actual speed in practical application is limited by circuit …

Series connected SiC MOSFETs technology can apply low rated voltage power device to
medium or high voltage applications. However, voltage unbalance problem limits its …