Monolayer transition-metal dichalcogenides have recently emerged as possible candidates
for valleytronic applications, as the spin and valley pseudospin are directly coupled and …

Transition-metal dichalcogenides can be easily produced as atomically thin sheets,
exhibiting the possibility to optically polarize and read out the valley pseudospin of …

Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with
nondegenerate valley indices. An intriguing possibility for these materials is the use of their …

Monolayer transition metal dichalcogenides (TMD) have immense potential for future
spintronic and valleytronic applications due to their 2D nature and long spin/valley lifetimes …

In monolayers of semiconducting transition metal dichalcogenides, the light helicity (σ+ or σ-
) is locked to the valley degree of freedom, leading to the possibility of optical initialization of …

Monolayer transition metal dichalcogenides (TMDs) hold great promise for future information
processing applications utilizing a combination of electron spin and valley pseudospin. This …

Inversion symmetry breaking and 3-fold rotation symmetry grant the valley degree of
freedom to the robust exciton in monolayer transition-metal dichalcogenides, which can be …

Monolayers of transition metal dichalcogenides are ideal materials to control both spin and
valley degrees of freedom either electrically or optically. Nevertheless, optical excitation …

In monolayer (1L) transition metal dichalcogenides (TMDs) the valence and conduction
bands are spin-split because of the strong spin–orbit interaction. In tungsten-based TMDs …

A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry
information in next-generation electronics and optoelectronics. Although monolayer …