Monoclinic β-Ga2O3, an ultra-wide bandgap semiconductor, has seen enormous activity in
recent years. However, the fundamental study of the plasmon–phonon coupling that dictates …

This work reports an investigation of electron transport in monoclinic β-Ga2O3 based on a
combination of density functional perturbation theory based-lattice dynamical computations …

Thin films of the wide band gap semiconductor β-Ga2O3 have a high potential for
applications in transparent electronics and high power devices. However, the role of …

By systematically comparing experimental and theoretical transport properties, we identify
the polar optical phonon scattering as the dominant mechanism limiting electron mobility in …

In this work, we report record electron mobility values in unintentionally doped β-Ga 2 O 3
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …

Monoclinic semiconducting β-Ga2O3 has drawn attention, particularly because its thin film
could be achieved via mechanical exfoliation from bulk crystals, which is analogous to van …

The wide band gap semiconductor β-Ga 2 O 3 shows promise for applications in high-power
and high-temperature electronics. The phonons of β-Ga 2 O 3 play a crucial role in …

We investigate the structural, electronic, vibrational, power, and transport properties of the β
allotrope of Ga 2 O 3 from first principles. We find phonon frequencies and elastic constants …

β-Ga 2 Ox 3 is a wide-band-gap semiconductor with promising applications in transparent
electronics and in power devices. β-Ga 2 O 3 has monoclinic crystal symmetry and does not …

In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at
the β-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 interface through modulation doping. Shubnikov-de Haas …