In this paper, different physical models of single trap defects are considered, which are
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …

The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a
junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) …

The influence of the channel shape in a finned (vertical) field-effect transistor (FinFET) on the
amplitude of random telegraph noise (RTN) induced by single interface trapped charge has …

In this work, we investigate, for the first time, the impacts of single trap induced Random
Telegraph Noise (RTN) on the drain current of FinFET devices and the stability of FinFET 6T …

We investigate the impacts of the single charged trap induced Random Telegraph Noise
(RTN) on the analog properties of FinFET and Trigate devices. A comprehensive …

In this work we simulate the dependence of the amplitude of the random telegraph noise
(RTN) on the gate overdrive (overload) for SOI FinFET with a cross section of rectangular …

The random telegraph noise (RTN) in gate-all-around (GAA) silicon (Si) nanowire (NW)
metal–oxide–semiconductor field-effect transistors (MOSFETs) induced by a single charge …

This paper analyzes the impacts of single-charged-trap-induced random telegraph noise
(RTN) on FinFET devices in tied-and independent-gate modes, 6T static random access …

The multi-gate device with Fin-or nanowire-shaped channel is considered as the
mainstream device structure towards the end of the CMOS technology roadmap. The …

This abstract presents a comprehensive 3D simulation study on the impact of a single
interface trapped charge in emerging 20nm gate-length FinFETs on an SOI substrate. The …