Fully depleted silicon on insulator devices CMOS: The 28-nm node is the perfect technology for analog, RF, mmW, and mixed-signal system-on-chip integration
A Cathelin - IEEE Solid-State Circuits Magazine, 2017 - ieeexplore.ieee.org
The race on the Complementary Metal-Oxide-Semiconductor (CMOS) More Moore
integration scale has brought to light several major limitations for efficient planar process …
integration scale has brought to light several major limitations for efficient planar process …
Planar fully-depleted-silicon-on-insulator technologies: Toward the 28 nm node and beyond
This paper presents a comprehensive overview of the research done in the last decade on
planar Fully-Depleted-Silicon-On-Insulator (FDSOI) technologies in the frame of the joint …
planar Fully-Depleted-Silicon-On-Insulator (FDSOI) technologies in the frame of the joint …
Fully depleted SOI process and device technology for digital and RF applications
F Ichikawa, Y Nagatomo, Y Katakura, M Itoh, S Itoh… - Solid-State …, 2004 - Elsevier
This work demonstrates suitability of FD-SOI devices for low power digital and RF
applications for wireless communication. FD-SOI CMOS offers an approximately 60% power …
applications for wireless communication. FD-SOI CMOS offers an approximately 60% power …
[图书][B] CMOS VLSI engineering: silicon-on-insulator (SOI)
JB Kuo, KW Su - 1998 - books.google.com
Silicon-On-Insulator (SOI) CMOS technology has been regarded as another major
technology for VLSI in addition to bulk CMOS technology. Owing to the buried oxide …
technology for VLSI in addition to bulk CMOS technology. Owing to the buried oxide …
[图书][B] Fully-depleted SOI CMOS circuits and technology
T Sakurai, A Matsuzawa, T Douseki - 2006 - Springer
The most important issue confronting CMOS technology is the power explosion of chips
arising from the scaling law. Bulk-Si devices are now running into a number of fundamental …
arising from the scaling law. Bulk-Si devices are now running into a number of fundamental …
Fully-depleted SOI CMOS technology for low-voltage low-power mixed digital/analog/microwave circuits
D Flandre, JP Colinge, J Chen, D De Ceuster… - … Integrated Circuits and …, 1999 - Springer
This paper demonstrates that fully-depleted (FD) silicon-on-insulator (SOI) technology offers
unique opportunities in the field of low-voltage, low-power CMOS circuits. Beside the well …
unique opportunities in the field of low-voltage, low-power CMOS circuits. Beside the well …
A 0.25-/spl mu/m, 600-MHz, 1.5-V, fully depleted SOI CMOS 64-bit microprocessor
SB Park, YW Kim, YG Ko, KI Kim, IK Kim… - IEEE Journal of Solid …, 1999 - ieeexplore.ieee.org
A 0.25-/spl mu/m, four-layer-metal, 1.5-V, 600-MHz, fully depleted (FD) silicon-on-insulator
(SOI) CMOS 64-bit ALPHA1 microprocessor integrating 9.66 million transistors on a 209 …
(SOI) CMOS 64-bit ALPHA1 microprocessor integrating 9.66 million transistors on a 209 …
FDSOI devices with thin BOX and ground plane integration for 32 nm node and below
C Fenouillet-Beranger, S Denorme, P Perreau… - Solid-State …, 2009 - Elsevier
In this paper we compare Fully-Depleted SOI (FDSOI) devices with different BOX (Buried
Oxide) thicknesses with or without ground plane (GP). With a simple high-k/metal gate …
Oxide) thicknesses with or without ground plane (GP). With a simple high-k/metal gate …
[图书][B] Fully depleted silicon-on-insulator: nanodevices, mechanisms and characterization
S Cristoloveanu - 2021 - books.google.com
Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental
and pragmatic concepts of this increasingly important technology. There are two main …
and pragmatic concepts of this increasingly important technology. There are two main …
SOI technologies for RF and millimeter-wave applications
This chapter presents an overview of silicon-on-insulator (SOI) technology for radio-
frequency (RF) and millimeter-wave telecommunication applications. The SOI technology …
frequency (RF) and millimeter-wave telecommunication applications. The SOI technology …