Methods of etching and smoothening films by exposing to a halogen-containing plasma and
an inert plasma within a bias window in cycles are provided. Methods are suitable for …

Dry etching using tools such as plasma provide directional etching. However, Such etching
methods lack selectivity and may etch into materials below those desired to be etched, or the …

A passive, in-line method of monitoring film removal (or deposition) during plasma etching
(or deposition) based on interference phenomena is disclosed. Plasma emission intensity is …

In one embodiment, a method for etching a Substrate includes providing a reactive ambient
around the Substrate when a non-crystalline layer is disposed over a first crystalline mate …

In one aspect of the invention, a method for Stripping photoresist on a low-k film is provided.
Generally, after the bulk of the photoresist is removed using a dry Strip process, the residue …

The present invention pertains to methods for removing unwanted material from a work
piece. More specifically, the invention pertains to stripping photo-resist material and …

Methods are described for etching metal layers that are difficult to volatize. Such as cobalt,
nickel, and platinum to form an etched metal layer with reduced surface roughness. The …

A method for anisotropic plasma etching of laterally defined patterns in a silicon substrate is
described. Protective layers made of at least one silicon compound with a second reaction …

The disclosure relates to a plasma etch chemistry which allows a near perfectly anisotropic
etch of silicon. A Cl-containing compound such as HCl has HBr added thereto, readily …

Methods are described herein for etching tantalum-containing films with various potential
additives while still retaining other desirable patterned substrate portions. The methods …