MBE synthesis of InAs/GaAs quantum dots and their characterisation
S Mathews, C Naresh, S Kumar… - International …, 2013 - ieeexplore.ieee.org
In this paper we present the details of the growth of InAs quantum dots synthesized on GaAs
substrates using a Solid-Source Molecular Beam Epitaxy (SS-MBE) system. The grown …
substrates using a Solid-Source Molecular Beam Epitaxy (SS-MBE) system. The grown …
[PDF][PDF] MBE Synthesisof InAs/GaAs Quantum Dotsand Their Characterisation
S Mathews, C Naresh, S Kumar, A Bhogale, DC Kothari - academia.edu
InAs quantum dots synthesized on GaAs substrates using a Solid-Source Molecular Beam
Epitaxy (SS-MBE) system. The grown structures were characterized by atomic force …
Epitaxy (SS-MBE) system. The grown structures were characterized by atomic force …
First step to Si photonics: synthesis of quantum dot light‐emitters on GaP substrate by MBE
We have grown InAs and InP quantum dots (QDs) on GaP substrate by Molecular Beam
Epitaxy (MBE) and analysed them by Atomic Force Microscopy (AFM) and …
Epitaxy (MBE) and analysed them by Atomic Force Microscopy (AFM) and …
Photoluminescence properties of self-assembled InAs quantum dots grown on InP substrates by solid source molecular beam epitaxy
QD Zhuang, SF Yoon, HQ Zheng - … of Vacuum Science & Technology B …, 2001 - pubs.aip.org
Self-organized InAs quantum dots (QDs) with different depositions grown on an InP (100)
substrate were prepared by solid source molecular beam epitaxy at different temperatures …
substrate were prepared by solid source molecular beam epitaxy at different temperatures …
Pre‐patterned silicon substrates for the growth of III–V nanostructures
This paper reviews the recent progresses obtained by direct growth of III–V semiconductor
quantum dots (QDs) on pre‐patterned and flat silicon substrates. This combination allows us …
quantum dots (QDs) on pre‐patterned and flat silicon substrates. This combination allows us …
III–V site-controlled quantum dots on Si patterned by nanoimprint lithography
We have successfully grown regular arrays of InAs/GaAs quantum dots on patterned Si
substrates. Thanks to the capability of nanoimprint lithography, we were able to obtain …
substrates. Thanks to the capability of nanoimprint lithography, we were able to obtain …
[PDF][PDF] Ordering of Self-Organized InAs/InP (001) Quantum Dots grown by MBE.
This work is devoted to the site-controlled nucleation of InAs quantum dots (QDs) grown on
InP (001) substrate by solid source molecular beam epitaxy. Controlled positioning of high …
InP (001) substrate by solid source molecular beam epitaxy. Controlled positioning of high …
Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μm
G Elias, C Cornet, P Caroff, C Levallois… - … Tohoku University Joint …, 2009 - hal.science
We report the growth of InAs quantum dots (QDs) on (001) and (113) B InP substrates by
molecular beam epitaxy. For the (113) B orientation, a very high QDs density (1.6 E11cm-2) …
molecular beam epitaxy. For the (113) B orientation, a very high QDs density (1.6 E11cm-2) …
A. POLIMENI, A. PATANE', M. CAPIZZI Dipartimento di Fisica, Universitii di Roma" La Sapienza", Piazzale A. Moro 2,['()() 185 Roma, ltaly and
F MARTELLI - HIGHLIGHTS OF LIGHT SPECTROSCOPY ON … - World Scientific
In this work, we report the photoluminescence of self· organized InAslGaAs quantwn dots.
We show that the nucleation of InAs dots is possible also for a nominal thickness of the InAs …
We show that the nucleation of InAs dots is possible also for a nominal thickness of the InAs …
Localized growth of InAs quantum dots on nanopatterned InP (001) substrates
A Turala, P Regreny, P Rojo-Romeo… - Applied Physics …, 2009 - pubs.aip.org
We present the method of site-controlled growth of InAs quantum dots on InP (001) by solid-
source molecular beam epitaxy. InAs dots are positioned using nanopatterns realized by …
source molecular beam epitaxy. InAs dots are positioned using nanopatterns realized by …