Recent advances in semiconductor technology offer vertical interconnect access (via) that
extend through silicon, popularly known as through silicon via (TSV). This book provides a …

This paper discourses the variations in methods of fabrication and modeling of Through-
Silicon Vias (TSVs) in chronological order. Three-dimensional (3D) integration is an …

The design and development of reliable 3D integrated systems require high performance
interconnects, which in turn are largely dependent on the choice of filler materials used in …

To address the abating performance improvements from device scaling, innovative 2.5-D
and 3-D integrated circuits with vertical interconnects called through-silicon vias (TSVs) …

Through silicon via (TSV) technology is key for next generation three-dimensional integrated
circuits, and carbon nanotubes (CNT) provide a promising alternative to metal for filling the …

Stacking of silicon chips with carbon nanotube (CNT)-based through-silicon vias (TSVs) is
experimentally demonstrated. Polymer filling is used to improve the transfer quality of CNTs …

Purpose–The purpose of this paper is to focus on through‐silicon via (TSV), with a new
concept that every chip or interposer could have two surfaces with circuits. Emphasis is …

In this work, through silicon vias (TSVs) were fabricated using a materials system consisting
of a composite of copper (Cu) and vertically grown carbon nanotubes (CNTs) as a possible …

Through-silicon via (TSV) is the latest in a progression of technologies for stacking silicon
devices in three dimensions (3D). Driven by the need for improved performance, methods to …

Three-dimensional ICs provide a promising option to build high-performance compact SoCs
by stacking one or more chips vertically. Through silicon vias (TSVs) form an integral …