Dilute ferromagnetic semiconductors: Physics and spintronic structures

T Dietl, H Ohno - Reviews of Modern Physics, 2014 - APS
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …

Prospects for high temperature ferromagnetism in (Ga, Mn) As semiconductors

T Jungwirth, KY Wang, J Mašek, KW Edmonds, J König… - Physical Review B, 2005 - APS
We report on a comprehensive combined experimental and theoretical study of Curie
temperature trends in (Ga, Mn) As ferromagnetic semiconductors. Broad agreement …

Theory of ferromagnetic (III, Mn) V semiconductors

T Jungwirth, J Sinova, J Mašek, J Kučera… - Reviews of Modern …, 2006 - APS
The body of research on (III, Mn) V diluted magnetic semiconductors (DMSs) initiated during
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …

A ten-year perspective on dilute magnetic semiconductors and oxides

T Dietl - Nature materials, 2010 - nature.com
Over the past ten years, the search for compounds combining the properties of
semiconductors and ferromagnets has evolved into an important field of materials science …

Ferromagnetic iii–v and ii–vi semiconductors

T Dietl, H Ohno - MRS bulletin, 2003 - Springer
Recent years have witnessed extensive research aimed at developing functional,
tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of …

Low-temperature ferromagnetism in (Ga, Mn)N: Ab initio calculations

K Sato, W Schweika, PH Dederichs… - Physical Review B, 2004 - APS
The magnetic properties of dilute magnetic semiconductors (DMSs) are calculated from first-
principles by mapping the ab initio results on a classical Heisenberg model. By using the …

Electronic structure and spin polarization of Mn-containing dilute magnetic III-V semiconductors

M Jain, L Kronik, JR Chelikowsky, VV Godlevsky - Physical Review B, 2001 - APS
We present ab initio density-functional calculations for the electronic structure of the dilute
magnetic semiconductors Mn x Ga 1− x As and Mn x In 1− x As with a realistic x= 0.063. We …

Ferromagnetic semiconductors: moving beyond (ga, mn) as

AH MacDonald, P Schiffer, N Samarth - Nature materials, 2005 - nature.com
The recent development of MBE techniques for growth of III–V ferromagnetic
semiconductors has created materials with exceptional promise in spintronics, that is …

Electronic structure and spin polarization of

L Kronik, M Jain, JR Chelikowsky - Physical Review B, 2002 - APS
We present ab initio pseudopotential–density-functional calculations for the electronic
structure of the dilute magnetic semiconductor Mn x Ga 1− x N, with a realistic x= 0.063, in its …

[HTML][HTML] Engineering magnetism in semiconductors

T Dietl, H Ohno - Materials Today, 2006 - Elsevier
Transition metal doped III-V, II-VI, and group IV compounds offer an unprecedented
opportunity to explore ferromagnetism in semiconductors. Because ferromagnetic spin-spin …