High quality InAsx p] _ x epitaxial layers were heteroepitaxially deposited on InP substrates
from the vapor phase using the hydride technique. For phosphorus rich alloys electron …

InAs x P 1-x with x ranging form 0 to 0.60 has been heteroepitaxially deposited on InP.
Organometallic vapor phase epitaxy was carried out in a horizontal, atmospheric pressure …

Single crystalline InAs~-xPx layers have been prepared by a vapor-phase growth technique
previously used to prepare very high-quality GaAsl-xPx. These InAsl-xPz alloys exhibit …

InAs1_xP x alloy systems have recently received con-Siderable attention since their energy
band gaps cover the near-infrared spectrum (ie, from 0.94 to 3. 6} Jm). With this broad range …

The growth of high quality InP and In 1− x Ga x As y P 1− y by gas source molecular beam
epitaxy is reported. 77 K mobilities up to 112,000 cm 2/V⋯ s for high purity InP have been …

Methods for obtaining high purity InP and InGaAsP alloy epitaxial layers on (100)-oriented
InP substrates using liquid phase epitaxy have been explored and are discussed. Net carrier …

InP‐based high‐electron mobility transistor (HEMT) structures have been grown containing
strained In1− x Al x P Schottky layers with x= 0.15–0.25. The band gaps of the strained …

Carrier concentration and mobility of unintentionally doped InP layers, grown directly on Si
using metal-organic vapor-phase epitaxy, have been studied. The formation of antiphase …

The vapor phase epitaxial growth of InAs x P 1− x alloys on InP substrates using the hydride
process is described. Growth conditions for lattice-matched In 1− y Ga y As epitaxial layers …

Abstract InP and In 0.53 Ga 0.47 As layers on (100)-oriented InP substrates were grown by
LPE having net 10 14 cm-3 carrier concentrations in the 10 14 cm-3 range and 77 K electron …