During the development of organometallic vapor phase epitaxy (OMVPE) for the growth of
III/V semiconductor materials, the choice of group III and group V source molecules has …

Until recently, the choice of group V source molecules for organometallic vapor phase
epitaxy (OMVPE) of III/V semiconductors has been simple: only AsH 3 and PH 3 produced …

A major limitation to the continuing development of organometallic vapor phase epitaxy
(OMVPE) for the growth of III/V semiconductor materials is the hazard posed by the hydride …

Metalorganic compounds are finding an increasing application in the growth of III–V and II–
VI semiconductor layers by metalorganic vapour phase epitaxy (MOVPE) and chemical …

The first success with the growth of III/V semiconductor materials by OMVPE dates back to
the mid-1950s. Today, it is the largest volume technique for the production of III/V photonic …

This review discusses new developments in our attempts to understand the fundamental
aspects of organometallic vapor phase epitaxy (OMVPE), a process now widely used in the …

Publisher Summary This chapter discusses the organometallic vapor-phase epitaxial growth
of III–V semiconductors. The chapter demonstrates that although organometallic vapor …

Volatile metalorganic compounds are being increasingly used for the deposition of
compound semiconductors from the vapour phase by metalorganic vapour phase epitaxy …

Non-pyrophoric organometallic compounds of aluminum, gallium and indium have been
developed for safer application in metalorganic vapor phase epitaxy (MOVPE) of III–V …

Metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD) has
emerged recently as the method of choice for large scale preparation of a variety of low …