The remarkable performance improvement of microprocessors over the past decades was
primarily driven by the continued down-scaling of the classical metal-oxide-semiconductor …

In this perspectives paper we will explore the doping state-of-the-art as it evolves for 3D to
2D structures and materials, and the following impact on the metrology methods needed to …

With the transition from planar to three‐dimensional device architectures such as FinFets,
TFETs and nanowires, new metrology approaches are required to characterize the 3D …

With the transition from planar to three-dimensional device architectures, devices such as
FinFETs, TFETs and nanowires etc. become omnipresent. This requires the dopant atom …

During the last 40 years the number of transistors in integrated circuits has doubled roughly
every two years, as predicted as early as 1965 by the cofounder of the Intel corporation …

Nowadays, technological developments towards advanced nano scale devices such as
FinFETs and TFETs require a fundamental understanding of three-dimensional doping …

In this paper, we discuss the metrology concepts that can be applied to characterize
dopant/carrier profiles in FinFET-based structures. We demonstrate their value in a study of …

Probing the distribution of charge carriers in semiconductor device structures is of crucial
importance to better understand semiconductor fabrication processes and how they affect …

Due to the dramatic downscaling of device features in recent technology nodes,
characterizing the electrical properties of these structures is becoming ever more …

The progressive down-scaling of CMOS technology has driven the semiconductor industry
to the realization of faster and lower power consumption VLSI circuits and systems. Among …