Methods of etching metal by depositing a material reactive with a metal to be etched and a
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …

Methods of etching metal by depositing a material reactive with a metal to be etched and a
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …

A method of etching an aluminum-containing layer on a substrate is described. The method
includes forming plasma from a process composition containing a halogen element, and …

(57) ABSTRACT A composite hard mask is disclosed that prevents build up of metal etch
residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ …

Embodiments of the present invention are directed to, among other things, fabrication of
magnetic tunnel junction (MTJ) devices whereby the tunnel barrier layer serves as the stop …

Methods of selectively etching metal-containing materials from the surface of a substrate are
described. The etch selectively removes metal-containing materials relative to silicon …

1. Field of the Invention This invention relates to Semiconductor device manufac turing, and
more particularly, to a method for etching a Semiconductor topography. 2. Description of the …

Methods of selectively etching metal-containing materials from the surface of a substrate are
described. The etch selectively removes metal-containing materials relative to silicon …

(57) ABSTRACT A method for fabricating an MRAM bit that includes depos iting a spacer
layer that protects the tunneling barrier layer during processing is disclosed. The deposited …

Methods are described for etching metal layers that are difficult to volatize. Such as cobalt,
nickel, and platinum to form an etched metal layer with reduced surface roughness. The …