The effect of ammonium polysulfide solution,(NH 4) 2 S x, on the surface passivation of p-
doped InP nanowires (NWs) was investigated by micro-photoluminescence. An …

The surface effects in the optical properties of catalyst-free grown InP nanowires are
investigated. Both as-grown nanowires and nanowires treated with hydrofluoric acid are …

Measuring lifetime of photogenerated charges in semiconductor nanowires (NW) is
important for understanding light-induced processes in these materials and is relevant for …

InP nanowires (NWs) with differently doped segments were studied with nanoscale
resolution using synchrotron based photoemission electron microscopy. We clearly resolved …

InP nanowires with InAsP quantum dots (QDs) were grown by molecular beam epitaxy on a
Si (111) substrates. The structure of the InAsP QDs were studied using transmission electron …

As-grown single-crystal InP nanowires, covered with a surface oxide, show a
photoluminescence efficiency that strongly varies from wire to wire. We show that the …

The effects of surface passivation on the electronic and structural properties of InP
nanowires have been investigated by first-principles calculations. We compare the …

The authors report optical studies of InP nanowires (NWs) grown by metal organic chemical
vapor deposition. By means of low temperature microphotoluminescence experiments, the …

We report the effect of synthesis parameters on the physical appearance and optical
properties of InP nanowires (NWs) grown on Si substrates by metal-organic chemical vapor …

InP nanowires were grown on (111) B InP substrates by metal–organic chemical vapour
deposition in the presence of colloidal gold particles as catalysts. Transmission electron …