The pulsed inductively coupled plasma (ICP) has considerable potential to satisfy multiple
stringent scaling requirements for use in the semiconductor industry. However, overshoot of …

Pulsed plasmas have emerged as promising candidates as a means for precise control of
ion energy/angle dependent surface processes and surface chemistry during the plasma …

Abstract Properties of an argon/hydrogen (89% molar argon) radio frequency
inductivelycoupled plasma subject to a periodic power (or coil current) profile isinvestigated …

Radio-frequency inductively coupled plasma in a pulse modulated approach was generated
by a MOSFET inverter supply of high electric efficiency. The plasma torch has an extremely …

The effects of dc preionization (PI) voltage and radial location on plasma formation
repeatability are presented for argon prefills of 20-200 mtorr with a discharge energy of 79.5 …

This contribution presents experimental results about the mode transition of an inductively
coupled radio frequency (RF)(13.56 MHz) argon discharge at different total gas pressures. In …

Using a Langmuir probe, time resolved measurements of plasma parameters were carried
out in a discharge produced by a pulsed dual frequency inductively coupled plasma source …

Radio frequency inductively coupled plasma sources are widely used in low temperature
industrial processing. Recent computer simulations and experiments indicate significant …

A fluid model is employed to investigate the effect of radio frequency bias on the behavior of
an argon inductively coupled plasma (ICP). In particular, the effects of ICP source power …

Pulsed inductively coupled plasmas (ICPs) are widely deployed in the fabrication of
semiconductor devices. Pulse repetition frequencies of up to tens of kHz are commonly used …