We show that the use of modified droplet epitaxy allows to tune the wetting layer thickness in
GaAs quantum dot structures. Morphological observations demonstrate that the wetting layer …

We introduce a high–temperature droplet epitaxy procedure, based on the control of the
arsenization dynamics of nanoscale droplets of liquid Ga on GaAs (111) A surfaces. The use …

We report the fabrication of extremely high-density GaAs quantum dots (QDs) by droplet
epitaxy. We investigated the dependence of temperature and coverage on the dot density …

In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs
quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum …

We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs
quantum dot structures—grown by modified droplet epitaxy—where no wetting layer is …

We have investigated post-annealing effects of photoluminescence (PL) properties in
GaAs/AlGaAs QDs fabricated by modified droplet epitaxy. The annealing temperatures were …

We propose a modified droplet epitaxy method for fabricating self-organized GaAs/AlGaAs
quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our …

Self-organization of quantum-dot pairs by high-temperature droplet epitaxy Page 1 Abstract
The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an …

We analyze the photoluminescence temperature behavior of InGaAs/GaAs quantum dots
grown by heterogeneous droplet epitaxy. Morphologically, these dots are nanocrystal …

Photoluminescence spectroscopy is used to analyze the effects of post-growth thermal
annealing on the electronic properties and capture processes of self-assembled …