In crossbar array structures, which serves as an “in-memory” compute engine for artificial
intelligence (AI) hardware, write sneak path problem causes undesired switching of devices …

Embedded non-volatile memory (eNVM) based crossbars have emerged as energy-efficient
building blocks for machine learning accelerators. However, the analog computations in …

Crossbar arrays using emerging Non-Volatile Memory (NVM) technologies offer high
density, fast access speed and low-power. However, the bandwidth of the crossbar is limited …

Owing to high device density, scalability, and non-volatility, magnetic tunnel junction (MTJ)-
based crossbars have garnered significant interest for implementing the weights of neural …

Abstract The Von-Neumann bottleneck, a major challenge in computer architecture, results
from significant data transfer delays between the processor and main memory. Crossbar …

With the increasing demand for low-power electronics, nanomagnetic devices have
emerged as strong potential candidates to complement present day transistor technology. A …

Scalable two-terminal selector devices are key technology enablers for cross-bar array
(CBA) architectures. Based on an analysis of CBA and sneak path, this paper discusses the …

Though physical mechanisms such as spin-transfer torque (STT), spin-orbit torque (SOT),
and voltage-controlled magnetic anisotropy (VCMA) has potential to enable energy-efficient …

The domain wall-magnetic tunnel junction (DW-MTJ) is a spintronic device that enables
efficient logic circuit design because of its low energy consumption, small size, and non …

As the traditional CMOS technology encounters significant scaling challenges, many
emerging beyond-CMOS devices have been proposed and developed to augment or even …