Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its
large band gap, good mechanical toughness and stable physical properties; it has become …

In this Letter, molybdenum (Mo) is introduced and evaluated as an alternative contact metal
to atomically-thin molybdenum disulphide (MoS 2), and high-performance field-effect …

High contact resistance (RC) at metal-Molybdenum disulfide (MoS 2) interface obscures the
intrinsic transport properties of MoS 2 [1] and limits its potential as a channel material for …

Contact resistance hinders the high performance of electrical devices, especially devices
based on two-dimensional (2D) materials, such as graphene and transition metal …

The promised performance of monolayer molybdenum disulfide (MoS 2)-based devices is
hindered by the high electrical resistance at the metal-MoS 2 contact. Benefitting from the …

We report a contact engineering method to minimize the Schottky barrier height (SBH) and
contact resistivity of MoS2 field-effect transistors (FETs) by using ultrathin 2D …

The difficulty in Schottky barrier height (SBH) control arising from Fermi-level pinning (FLP)
at electrical contacts is a bottleneck in designing high-performance nanoscale electronics …

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide
(MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On …

As the physical scaling of traditional silicon CMOS devices is gradually approaching its
physical limit, molybdenum disulfide (MoS2) having a two-dimensional atomic-layered …

Understanding the nature of the contacts in devices based on MoS2 with metal electrodes is
vital to enhancing carrier injection efficiency. In this work, geometric and electronic structures …